IRF7240TRPBF International Rectifier, IRF7240TRPBF Datasheet
IRF7240TRPBF
Manufacturer Part Number
IRF7240TRPBF
Description
MOSFET P-CH 40V 10.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF7240TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
110nC @ 10V
Vgs(th) (max) @ Id
3V @ 250µA
Current - Continuous Drain (id) @ 25° C
10.5A
Drain To Source Voltage (vdss)
40V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 10.5A, 10V
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
25 mOhms
Drain-source Breakdown Voltage
- 40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 10.5 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
73 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7240TRPBF
Manufacturer:
IR
Quantity:
20 000
Absolute Maximum Ratings
Thermal Resistance
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
www.irf.com
R
V
I
I
I
P
P
V
T
D
D
DM
J,
DS
D
D
GS
@ T
@ T
JA
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Parameter
Parameter
GS
GS
@ -10V
@ -10V
G
S
S
S
V
-40V
DSS
1
2
3
4
T o p V ie w
HEXFET
0.025@V
0.015@V
8
7
6
5
-55 to + 150
R
Max.
Max.
-10.5
DS(on)
-8.6
± 20
50
D
D
D
D
-40
-43
2.5
1.6
A
20
GS
GS
®
IRF7240
max
Power MOSFET
= -4.5V
= -10V
SO-8
PD- 93916
-10.5A
-8.4A
mW/°C
Units
Units
I
°C/W
D
W
°C
V
A
V
1
3/6/01
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