IRFH5303TR2PBF International Rectifier, IRFH5303TR2PBF Datasheet - Page 6
![MOSFET N-CH 30V 82A 5X6 PQFN](/photos/13/92/139248/irfh5250tr2pbf_sml.jpg)
IRFH5303TR2PBF
Manufacturer Part Number
IRFH5303TR2PBF
Description
MOSFET N-CH 30V 82A 5X6 PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFH5303TRPBF.pdf
(8 pages)
Specifications of IRFH5303TR2PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.2 mOhm @ 49A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
2.35V @ 50µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
2190pF @ 15V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-PowerVQFN
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
3.6mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
QFN
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
6.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
82 A
Power Dissipation
46 W
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH5303TR2PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH5303TR2PBF
Manufacturer:
IR
Quantity:
20 000
0
6
+
-
Fig 17. Gate Charge Test Circuit
D.U.T
1K
+
-
•
•
•
•
Fig 16.
SD
S
•
•
•
DUT
-
L
G
+
HEXFET
VCC
+
-
®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Vgs(th)
Qgs1 Qgs2
Vds
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
for N-Channel
Fig 18. Gate Charge Waveform
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgd
D =
Period
P.W.
Qgodr
V
V
I
SD
GS
DD
=10V
www.irf.com
Vgs
Id