IRF7458PBF International Rectifier, IRF7458PBF Datasheet - Page 5

MOSFET N-CH 30V 14A 8-SOIC

IRF7458PBF

Manufacturer Part Number
IRF7458PBF
Description
MOSFET N-CH 30V 14A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF7458PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 14A, 16V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
2410pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Current, Drain
14 A
Gate Charge, Total
39 nC
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
6.3 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
22 ns
Time, Turn-on Delay
10 ns
Transconductance, Forward
26 S
Voltage, Breakdown, Drain To Source
30 V
Voltage, Forward, Diode
0.82 V
Voltage, Gate To Source
±30 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.008Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±30V
Continuous Drain Current
14A
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Fig 6. On-Resistance Vs. Drain Current
www.irf.com
0.01
100
0.1
16
12
10
0.00001
8
4
0
1
25
D = 0.50
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.1
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
≤ 0.1 %
≤ 1
1
J
IRF7458PbF
DM
x Z
1
thJA
t
P
2
d(off)
DM
+ T
10
A
t
t
1
f
t
2
+
-
100
5

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