IRFR48ZPBF International Rectifier, IRFR48ZPBF Datasheet

MOSFET N-CH 55V 42A DPAK

IRFR48ZPBF

Manufacturer Part Number
IRFR48ZPBF
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR48ZTRLPBF.pdf (11 pages)

Specifications of IRFR48ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 37A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1720pF @ 25V
Power - Max
91W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
42A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
11mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
11 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
62 A
Power Dissipation
91 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
35 ns
Gate Charge Qg
40 nC
Minimum Operating Temperature
- 55 C
Rise Time
61 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFR48ZPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR48ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
l
Description
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
Features
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
JC
JA
JA
@ T
@ T
@ T
Lead-Free
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
(Tested )
C
C
C
C
= 25°C
= 100°C Continuous Drain Current, V
= 25°C
= 25°C Power Dissipation
®
®
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Power MOSFET utilizes the latest
j
Ã
j
Parameter
Parameter
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
ij
(Silicon Limited)
(Package Limited)
h
G
IRFR48ZPbF
D-Pak
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
–––
–––
–––
HEXFET
10 lbf
S
D
-55 to + 175
y
Max.
in (1.1N
0.61
250
± 20
110
IRFR48ZPbF
IRFU48ZPbF
42
91
74
44
62
®
IRFU48ZPbF
R
Power MOSFET
DS(on)
y
V
m)
Max.
I-Pak
1.64
DSS
110
I
40
D
= 42A
PD - 95950A
= 11m
= 55V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRFR48ZPBF Summary of contents

Page 1

... R JC Junction-to-Ambient (PCB mount Junction-to-Ambient R JA ® www.irf.com G D-Pak IRFR48ZPbF Parameter @ 10V (Silicon Limited 10V GS @ 10V (Package Limited Parameter 95950A IRFR48ZPbF IRFU48ZPbF ® HEXFET Power MOSFET 55V DSS R = 11m DS(on 42A D S I-Pak IRFU48ZPbF Max. Units 250 91 W 0.61 W/°C ± 20 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 10 4.5V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C ...

Page 5

LIMITED BY PACKAGE 100 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 1 0.20 0.10 0.1 0.05 0.02 0.01 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 80 TOP Single Pulse BOTTOM 1% Duty Cycle 37A ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPLE: THIS IS AN IRFR120 WITH AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 IN THE ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" ssembly line position indicates "Lead-Free" qualification ...

Page 10

EXAMPLE: THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 2001 ASSEMBLY LINE "A" Note: "P" embly line position indicates Lead-F ree" OR INTERNAT IONAL RECT IF IER LOGO ...

Page 11

TR 12.1 ( .476 ) FEED DIRECTION 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. ...

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