IRLU7843PBF International Rectifier, IRLU7843PBF Datasheet - Page 3

• Manufacturer Part Number: IRLU7843PBF
• Description: MOSFET N-CH 30V 161A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU7843PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 161A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4380pF @ 15V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 161 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU7843PBF

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1000
1000
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
100
0.1
10
10
1
1
2.0
0.1
T J = 175°C
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
T J = 25°C
3.0
1
2.5V
V DS = 15V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 25°C
4.0
10
TOP
BOTTOM 2.5V
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
100
5.0
1000
100
2.0
1.5
1.0
0.5
10
1
0.1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
I D = 30A
V GS = 10V
IRLR/U7843PbF
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
20 40 60 80 100 120 140 160 180
1
2.5V
20µs PULSE WIDTH
Tj = 175°C
10
TOP
BOTTOM 2.5V
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
3
100