IRF7210PBF International Rectifier, IRF7210PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7210PBF
• Description: MOSFET P-CH 12V 16A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7210PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 600mV @ 500µA
• Gate Charge (qg) @ Vgs: 212nC @ 5V
• Input Capacitance (ciss) @ Vds: 17179pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.007Ohm
• Drain-source On-volt: 12V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 16A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 30 ns
• Gate Charge Qg: 212 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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140
120
100
Fig 3. Typical Transfer Characteristics
80
60
40
20
20
16
12
0
8
4
0
0.0
Fig 1. Typical Output Characteristics
0
TOP
BOTTOM -0.8V
-V
-V
VGS
-1.8V
-1.6V
-1.4V
-1.2V
-1.0V
GS
2
DS
2.0
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
4
300µs PULSE WIDTH
T = 25°C
4.0
J
V
300µs PULSE WIDTH
DS
T = 25°C
J
6
= -10V
T = 150°C
J
6.0
8
-0.8V
8.0
10
A
A
2.0
1.5
1.0
0.5
0.0
16
12
Fig 4. Normalized On-Resistance
8
4
0
-60 -40 -20
Fig 2. Typical Output Characteristics
0
TOP
BOTTOM -0.8V
I =
D
-16A
-V
T , Junction Temperature ( C)
Vs. Temperature
VGS
-1.6V
-1.4V
-1.2V
-1.0V
-1.8V
2
J
DS
0
, Drain-to-Source Voltage (V)
IRF7210PbF
20 40 60 80 100 120 140 160
4
300µs PULSE WIDTH
T = 150°C
J
6
V
°
GS
8
=
-0.8V
-4.5V
3
10
A