IRF7832PBF International Rectifier, IRF7832PBF Datasheet
IRF7832PBF
Specifications of IRF7832PBF
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IRF7832PBF Summary of contents
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... Junction-to-Ambient R θJA Notes through are on page 10 „ www.irf.com V R DSS 4.0m @V 30V Top View @ 10V GS @ 10V GS Typ. ––– f ––– IRF7832PbF HEXFET Power MOSFET max Qg DS(on) = 10V 34nC SO-8 Max. Units 30 V ± 160 2.5 W 1.6 0.02 W/° ...
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... IRF7832PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...
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... Fig 2. Typical Output Characteristics 2 16A 4.5V 1.5 1.0 0.5 0.0 -60 -40 -20 3.5 4.0 Fig 4. Normalized On-Resistance IRF7832PbF VGS TOP 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.25V 2.25V 20µs PULSE WIDTH Tj = 150° 100 Drain-to-Source Voltage (V) ...
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... IRF7832PbF 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 1000 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 150° 25°C 1 0.1 0.0 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 16A iss oss C rss 1 0 100 0 Fig 6 ...
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... THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 2.5 2 250µA 1.5 1.0 0.5 -60 -40 -20 125 150 Fig 10. Threshold Voltage Vs. Temperature 0.001 0.01 0 Rectangular Pulse Duration (sec) IRF7832PbF 100 120 140 160 Temperature (° 100 5 ...
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... IRF7832PbF 125° 25° Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V L DRIVER D.U 20V VGS 0.01 Ω Fig 14. Unclamped Inductive Test Circuit and Waveform V DS D.U Pulse Width < 1µs Duty Factor < 0.1% Fig 16. Switching Time Test Circuit 6 600 20A ...
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... D.U.T. V Waveform DS V Re-Applied G + Voltage - Inductor Curent for Logic Level Devices ® HEXFET Power MOSFETs Qgd Qgodr Fig 19. Gate Charge Waveform IRF7832PbF P.W. Period D = Period V =10V GS Body Diode Forward Current di/dt Diode Recovery dv/ Body Diode Forward Drop I Ripple ≤ for N-Channel ...
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... IRF7832PbF Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ⎛ ⎞ Q ⎜ ⎟ × ⎜ × × V × ⎝ ⎠ ⎝ × V × ⎛ Q ⎞ + × V × ...
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... SO-8 Part Marking @Y6HQG@)ÃUCDTÃDTÃ6IÃD A&'&9 ÃA@UF` DIU@ I6UDPI6G www.irf.com 7 C !$Ãb dà ’ Ãb#dà %#%Ãb!$$d "Yà !&Ãb$d ' @8UDAD@ GPBP IRF7832PbF DI8C@T HDGGDH@U@ST 9DH HDI H6Y HDI H6Y 6 $"! %'' "$ &$ 6 # (' ...
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... IRF7832PbF SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. ...