IRF540NSPBF International Rectifier, IRF540NSPBF Datasheet - Page 5
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IRF540NSPBF
Manufacturer Part Number
IRF540NSPBF
Description
MOSFET N-CH 100V 33A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF540NSPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
44 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
71nC @ 10V
Input Capacitance (ciss) @ Vds
1960pF @ 25V
Power - Max
130W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Current, Drain
33 A
Gate Charge, Total
71 nC
Package Type
D2Pak
Polarization
N-Channel
Power Dissipation
130 W
Resistance, Drain To Source On
44 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
39 ns
Time, Turn-on Delay
11 ns
Transconductance, Forward
21 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
44 m Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
33 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
35 ns
Gate Charge Qg
47.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
35 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF540NSPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF540NSPBF
Manufacturer:
IR
Quantity:
21 400
Part Number:
IRF540NSPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
35
30
25
20
15
10
5
0
Fig 9. Maximum Drain Current Vs.
25
0.01
0.1
10
0.00001
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.20
0.10
0.05
0.02
0.01
T , Case Temperature ( C)
Case Temperature
C
75
(THERMAL RESPONSE)
0.0001
100
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
150
1
0.001
175
V
90%
10%
V
0.01
DS
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
d(on)
J
t
r
DM
≤ 0.1 %
≤ 1
x Z
1
0.1
thJC
P
2
DM
+ T
C
t
1
t
d(off)
t
2
t
f
1
+
-
5