IRLU120NPBF International Rectifier, IRLU120NPBF Datasheet - Page 5

• Manufacturer Part Number: IRLU120NPBF
• Description: MOSFET N-CH 100V 10A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU120NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 185 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Current, Drain: 10 A
• Gate Charge, Total: 20 nC
• Package Type: I-Pak (TO-251AA)
• Polarization: N-Channel
• Power Dissipation: 48 W
• Resistance, Drain To Source On: 0.185 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 23 ns
• Time, Turn-on Delay: 4 ns
• Transconductance, Forward: 3.1 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 265 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 11 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 13.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU120NPBF

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0.01
0.1
10
0.00001
10
1
8
6
4
2
0
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature (°C)
Case Temperature
C
75
(THERMAL RESPONSE)
100
0.0001
SINGLE PULSE
125
t , Rectangular Pulse Duration (sec)
1
150
175
A
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
IRLR/U120NPbF
t
r
≤ 0.1 %
J
≤ 1
0.01
DM
x Z
1
thJC
P
2
t
DM
d(off)
+ T
C
t
1
t
f
t
2
+
-
5
0.1