IRF3709PBF International Rectifier, IRF3709PBF Datasheet - Page 7

• Manufacturer Part Number: IRF3709PBF
• Description: MOSFET N-CH 30V 90A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3709PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 5V
• Input Capacitance (ciss) @ Vds: 2672pF @ 16V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 120 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 9.2 ns
• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 171 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3709PBF

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
D.U.T
*
Fig 14. For N-Channel HEXFET
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
®
D =
-
Power MOSFETs
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
*
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