IRL3303SPBF International Rectifier, IRL3303SPBF Datasheet - Page 5

• Manufacturer Part Number: IRL3303SPBF
• Description: MOSFET N-CH 30V 38A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3303SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 38 A
• Gate Charge, Total: 26 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 68 W
• Resistance, Drain To Source On: 0.026 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 14 ns
• Time, Turn-on Delay: 7.4 ns
• Transconductance, Forward: 12 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 40 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 38 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL3303SPBF

www.irf.com
0.01
40
30
20
10
0.1
10
0.00001
0
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
150
t , Rectangular Pulse Duration (sec)
1
175
0.001
V
90%
10%
V
DS
GS
t
1. Duty factor D = t / t
2. Peak T = P
d(on)
Notes:
t
r
J
≤ 0.1 %
≤ 1
0.01
DM
x Z
1
thJC
P
2
DM
+ T
t
d(off)
C
t
1
t
t
f
2
+
-
5
0.1