IRLB8748PBF International Rectifier, IRLB8748PBF Datasheet

MOSFET N-CH 30V 78A TO220AB

IRLB8748PBF

Manufacturer Part Number
IRLB8748PBF
Description
MOSFET N-CH 30V 78A TO220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLB8748PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.8 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
78A
Vgs(th) (max) @ Id
2.35V @ 50µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Input Capacitance (ciss) @ Vds
2139pF @ 15V
Power - Max
75W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
92 A
Power Dissipation
75 W
Mounting Style
Through Hole
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLB8748PBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Applications
l
l
l
l
l
l
l
Notes through
www.irf.com
Benefits
V
V
I
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
D
DM
DS
GS
D
D
J
STG
θJC
θCS
θJA
@ T
@ T
@ T
and Current
@T
@T
Optimized for UPS/Inverter Applications
High Frequency Synchronous Buck
High Frequency Isolated DC-DC
Converters for Computer Processor Power
Converters with Synchronous Rectification
for Telecom and Industrial use
Very Low RDS(on) at 4.5V V
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
Lead-Free
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
= 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
are on page 9
h
g
GS
Parameter
Parameter
GS
GS
GS
h
h
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
@ 10V (Package Limited)
i
V
30V
DSS
Gate
G
HEXFET
R
DS(on)
300 (1.6mm from case)
D
IRLB8748PbF
IRLB8748PbF
Typ.
–––
–––
10 lbf
0.5
4.8m
TO-220AB
Drain
-55 to + 175
D
Max.
y
92
®
± 20
370
in (1.1N
0.5
30
65
78
75
38
max
f
G
Power MOSFET
D
S
Max.
y
–––
2.0
62
m)
Source
15nC
S
Qg
04/22/09
Units
Units
W/°C
°C/W
°C
W
V
A
1

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IRLB8748PBF Summary of contents

Page 1

... Gate Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Package Limited Parameter g IRLB8748PbF ® HEXFET Power MOSFET R max Qg DS(on) 4.8m 15nC TO-220AB IRLB8748PbF D S Drain Source Max. Units 30 V ± 370 0.5 W/°C - 175 °C 300 (1.6mm from case lbf in (1.1N m) Typ ...

Page 2

... IRLB8748PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

... Fig 2. Typical Output Characteristics 2 40A 1 10V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -40 - 100120140160180 Fig 4. Normalized On-Resistance IRLB8748PbF VGS 10V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V 3.0V ≤ 60µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage ( Junction Temperature (°C) vs ...

Page 4

... IRLB8748PbF 10000 0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C rss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 100 175° 25°C 1 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 14 32A 12.0 10.0 8.0 6.0 4 ...

Page 5

... τ J τ J τ τ τ 1 τ τ Ci= τi/Ri Ci i/Ri 0.0001 0.001 Rectangular Pulse Duration (sec) IRLB8748PbF 50µ 250µ 1.0mA 100 125 150 175 Temperature ( ° (°C/W) τi (sec 1.55246 0.005303 3 4 τ C τ 0.00682 8.250407 τ 4 τ τ 0.00172 6.932919 ...

Page 6

... IRLB8748PbF GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage D.U 20V V GS 0.01 Ω Fig 13a. Unclamped Inductive Test Circuit Fig 13b. Unclamped Inductive Waveforms 6 500 40A 450 400 350 300 250 200 125°C 150 100 25° Starting Junction Temperature (°C) Fig 13c ...

Page 7

... D.U.T. V Waveform DS Re-Applied G + Voltage - Inductor Curent ® HEXFET Power MOSFETs Id Vgs + V DS D.U. Fig 17. Gate Charge Waveform IRLB8748PbF P.W. Period D = Period V =10V GS Body Diode Forward Current di/dt Diode Recovery dv/ Body Diode Forward Drop I Ripple ≤ for N-Channel Vds Vgs(th) Qgs1 ...

Page 8

... IRLB8748PbF TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com ...

Page 9

... This is only applied to TO-220AB pakcage. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.04/2009 IRLB8748PbF TAC Fax: (310) 252-7903 9 ...

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