IRF6633TRPBF International Rectifier, IRF6633TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF6633TRPBF
• Description: MOSFET N-CH 20V 16A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6633TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.6 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1250pF @ 10V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MP
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.4 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 89 W
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6633TRPBFTR

…
‡
Notes:
IRF6633PbF
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
I
I
V
t
Q
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
G
iss
oss
rss
g
Q
Q
Q
Q
sw
oss
rr
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
@T
Pulsed Source Current
(Body Diode) g
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
=25°C (Body Diode)
Parameter
Parameter
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.4
20
35
1250
–––
-5.2
–––
–––
–––
–––
–––
630
200
–––
–––
4.1
7.0
1.8
3.3
1.2
4.0
2.5
5.2
8.8
1.5
9.7
4.3
0.8
16
11
31
12
18
32
-100
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
132
5.6
9.4
2.2
1.0
1.0
17
53
27
48
mV/°C
mV/°C
mΩ
nC
nC
nC
µA
nA
pF
ns
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 15
V
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 500A/µs i
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
= 13A
= 13A
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= 4.5V, I
= V
= 16V, V
= 16V, V
= 20V
= -20V
= 10V, I
= 10V
= 4.5V
= 10V, V
= 16V, V
= 0V
= 10V
GS
, I
D
Conditions
Conditions
S
F
D
D
D
= 250µA
D
GS
GS
GS
GS
= 13A, V
= 13A
= 250µA
= 13A
= 16A i
= 13A i
= 0V
= 0V, T
= 0V
= 4.5V i
D
www.irf.com
GS
= 1mA
J
= 125°C
= 0V i