IRFU3806PBF International Rectifier, IRFU3806PBF Datasheet - Page 2
![MOSFET N-CH 60V 43A I-PAK](/photos/5/59/55916/irfu3806pbf_sml.jpg)
IRFU3806PBF
Manufacturer Part Number
IRFU3806PBF
Description
MOSFET N-CH 60V 43A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR3806TRPBF.pdf
(10 pages)
Specifications of IRFU3806PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15.8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1150pF @ 50V
Power - Max
71W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
43A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
12.6mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
43 A
Power Dissipation
71 W
Mounting Style
SMD/SMT
Gate Charge Qg
22 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU3806PBF
Manufacturer:
NXP
Quantity:
450
Part Number:
IRFU3806PBF
Manufacturer:
IR
Quantity:
20 000
Notes:
Static @ T
V
∆V
R
V
I
I
Dynamic @ T
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G(int)
iss
oss
rss
oss
oss
g
gs
gd
sync
rr
Repetitive rating; pulse width limited by max. junction
Limited by T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
temperature.
use above this value.
I
Symbol
Symbol
Symbol
R
2
(BR)DSS
SD
G
eff. (ER) Effective Output Capacitance (Energy Related)h –––
eff. (TR) Effective Output Capacitance (Time Related)g
≤ 25A, di/dt ≤ 1580A/µs, V
= 25Ω, I
/∆T
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Forward Transconductance
= 25°C (unless otherwise specified)
= 25A, V
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for
J
= 25°C, L = 0.23mH
DD
≤ V
Parameter
Parameter
(BR)DSS
, T
g
J
≤ 175°C.
- Q
gd
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.075 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
–––
60
41
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
R
C
as C
C
mended footprint and soldering techniques refer to application note #AN-994.
oss
θ
oss
oss
is measured at T
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
1150
12.6
28.3
0.79
–––
–––
–––
–––
–––
–––
–––
130
190
230
–––
–––
–––
5.0
6.3
6.3
1.4
22
40
49
47
67
22
26
17
24
while V
DS
15.8
-100
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
170
–––
4.0
1.3
43
33
39
26
36
20
30
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
J
approximately 90°C.
V/°C
mΩ
µA
nA
nC
nC
ns
pF
ns
S
Ω
A
V
A
V
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
= 25A
= 25A, V
= 25A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 20Ω
= V
= 60V, V
= 48V, V
= 10V, I
= 30V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V f
= 39V
= 10V f
= 0V
= 0V, V
= 0V, V
GS
, I
DSS
D
DS
S
D
DS
DS
D
D
= 250µA
DSS
GS
GS
.
= 25A, V
= 50µA
= 25A f
= 25A
=0V, V
= 0V to 60V h
= 0V to 60V g
Conditions
Conditions
Conditions
= 0V
= 0V, T
.
V
I
di/dt = 100A/µs f
F
R
= 25A
D
GS
= 51V,
GS
= 5mAc
J
= 10V
= 125°C
= 0V f
www.irf.com
G
D
S