IRFI1010NPBF International Rectifier, IRFI1010NPBF Datasheet - Page 3

• Manufacturer Part Number: IRFI1010NPBF
• Description: MOSFET N-CH 55V 49A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFI1010NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 58W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 44 A
• Power Dissipation: 47 W
• Mounting Style: Through Hole
• Gate Charge Qg: 86.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFI1010NPBF

1000
1000
100
100
10
10
1
0.1
4
TOP
BOTTOM 4.5V
V
V
5
GS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
DS
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25°C
J
6
1
4.5V
7
T = 175°C
V
20µs PULSE WIDTH
J
20µs PULSE WIDTH
T = 25°C
DS
C
= 25V
10
8
9
100
10
A
A
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
0.1
-60 -40 -20
TOP
BOTTOM 4.5V
I
D
= 72A
T , Junction Temperature (°C)
V
J
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
0
, Drain-to-Source Voltage (V)
20
1
40
60
4.5V
80 100 120 140 160 180
20µs PULSE WIDTH
T = 175°C
C
10
V
GS
= 10V
100
A
A