IRFS5615PBF International Rectifier, IRFS5615PBF Datasheet - Page 3
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IRFS5615PBF
Manufacturer Part Number
IRFS5615PBF
Description
MOSFET N-CH 150V 33A D2PAK
Manufacturer
International Rectifier
Datasheet
1.IRFSL5615PBF.pdf
(9 pages)
Specifications of IRFS5615PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
42 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1750pF @ 50V
Power - Max
144W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
33 A
Power Dissipation
144 W
Mounting Style
SMD/SMT
Gate Charge Qg
26 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
100000
10000
1000
1000
1000
0.01
Fig 3. Typical Transfer Characteristics
100
100
100
0.1
10
0.1
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
1
2
TOP
BOTTOM
T J = 175°C
V DS , Drain-to-Source Voltage (V)
C rss
4
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C oss
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
C iss
6
10
1
T J = 25°C
5.0V
8
V DS = 50V
≤60µs PULSE WIDTH
f = 1 MHZ
≤ 60µs PULSE WIDTH
Tj = 25°C
10
100
10
12
14
1000
100
16
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
14.0
12.0
10.0
100
0.1
3.0
2.5
2.0
1.5
1.0
0.5
8.0
6.0
4.0
2.0
0.0
10
1
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
Fig 2. Typical Output Characteristics
0
TOP
BOTTOM
I D = 21A
V GS = 10V
I D = 21A
V DS , Drain-to-Source Voltage (V)
5
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10
1
V DS = 120V
V DS = 75V
VDS= 30V
15
≤ 60µs PULSE WIDTH
Tj = 175°C
5.0V
20
10
25
30
100
35
3