IRF6623TR1 International Rectifier, IRF6623TR1 Datasheet

IRF6623TR1

Manufacturer Part Number

IRF6623TR1

Description

MOSFET N-CH 20V 16A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6623.pdf (9 pages)

Specifications of IRF6623TR1

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

5.7 mOhm @ 15A, 10V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

16A

Vgs(th) (max) @ Id

2.2V @ 250µA

Gate Charge (qg) @ Vgs

17nC @ 4.5V

Input Capacitance (ciss) @ Vds

1360pF @ 10V

Power - Max

1.4W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric ST

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6623TR1

Manufacturer:

Quantity:

890

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6623TR1

Manufacturer:

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6623TR1PBF

Manufacturer:

International Rectifier

Quantity:

30 666

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6623TR1PBF

Manufacturer:

Quantity:

20 000

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Notes through ˆ are on page 2

Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)

Description

The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The

DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and

vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-

turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power

systems, improving previous best thermal resistance by 80%.

The IRF6623 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the

latest generation of processors operating at higher frequencies. The IRF6623 has been optimized for parameters that are

critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the

control FET socket.

www.irf.com

Absolute Maximum Ratings

Thermal Resistance

STG

θJA

θJC

θJ-PCB

Application Specific MOSFETs

Ideal for CPU Core DC-DC Converters

Low Conduction Losses

Low Switching Losses

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Compatible with Existing Surface Mount Techniques

@ T

= 25°C

= 70°C

= 25°C

= 70°C

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy

Avalanche Current

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Case

Junction-to-PCB Mounted

Ã™

™

Parameter

@ 10V

Ãf

20V

DSS

Typ.

12.5

–––

1.0

9.7mΩ@V

5.7mΩ@V

-40 to + 150

HEXFET

DS(on)

Max.

0.017

120

±20

1.4

2.1

max

Max.

= 4.5V

= 10V

–––

3.0

IRF6623

DirectFET™ ISOMETRIC

Power MOSFET

Qg(typ.)

packaging to

11nC

Units

W/°C

°C/W

°C

12/21/05

Related parts for IRF6623TR1

IRF6623TR1 Summary of contents

Page 1

Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with Existing Surface Mount Techniques l Applicable DirectFET Outline and ...

Page 2

IRF6623 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

TOP 100 BOTTOM 10 1 2.5V ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25°C ...

Page 4

IRF6623 1000.0 100 150°C 10 25°C 1.0 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

125° 25°C 4 2.0 4.0 6.0 8 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage 15V D.U 20V ...

Page 6

IRF6623 D.U.T + ƒ • • - • + ‚ - R • • • • Fig 17. DirectFET™ Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding ...

Page 7

DirectFET™ Outline Dimension, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking www.irf.com DIMENSIONS METRIC IMPERIAL MAX ...

Page 8

... IRF6623 DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6623). For 1000 parts on 7" reel, order IRF6623TR1 STANDARD OPTION (QTY 4800) CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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