IRF6665TR1PBF International Rectifier, IRF6665TR1PBF Datasheet - Page 10

• Manufacturer Part Number: IRF6665TR1PBF
• Description: MOSFET N-CH 100V 4.2A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6665TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SH
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.2 A
• Power Dissipation: 42 W
• Gate Charge Qg: 8.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6665TR1PBFTR

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/