IRF3205STRLPBF International Rectifier, IRF3205STRLPBF Datasheet - Page 7

• Manufacturer Part Number: IRF3205STRLPBF
• Description: MOSFET N-CH 55V 110A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF3205STRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 62A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 146nC @ 10V
• Input Capacitance (ciss) @ Vds: 3247pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 110 A
• Gate Charge, Total: 146 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 8 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 50 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 44 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 110A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 97.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF3205STRLPBF; IRF3205STRLPBFTR

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
„
P.W.
+
IRF3205S/LPbF
V
V
I
SD
GS
DD
=10V
+
-
7