IRLH5030TR2PBF International Rectifier, IRLH5030TR2PBF Datasheet - Page 3

• Manufacturer Part Number: IRLH5030TR2PBF
• Description: MOSFET N-CH 100V 13A 8VQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLH5030TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 2.5V @ 150µA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 5185pF @ 50V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.9 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 13 A
• Power Dissipation: 3.6 W
• Gate Charge Qg: 44 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.009Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±16V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLH5030TR2PBFTR

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Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
100
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
0.1
1
1
TOP
BOTTOM
2
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
C iss
C oss
C rss
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
3
T J = 25°C
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
1
10
4
2.7V
5
V DS = 25V
≤60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
6
T J = 150°C
100
10
7
8
9
100
1000
10
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
14.0
12.0
10.0
10
2.5
2.0
1.5
1.0
0.5
8.0
6.0
4.0
2.0
0.0
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
TOP
BOTTOM
I D = 50A
V GS = 10V
I D = 50A
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
1
40
V DS = 80V
V DS = 50V
V DS = 20V
≤ 60µs PULSE WIDTH
Tj = 150°C
2.7V
10
80
100
120
3