STP80NF55-06FP STMicroelectronics, STP80NF55-06FP Datasheet - Page 4

• Manufacturer Part Number: STP80NF55-06FP
• Description: MOSFET N-CH 55V 60A TO-220FP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF55-06FP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 189nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0065 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
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Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP
Parameter
Parameter
Parameter
GS
= 0)
V
R
(see
I
V
V
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
GS
DD
DS
DS
DD
G
= 250µA, V
=4.7Ω, V
= V
= 10V, I
= 50 V, I
= Max rating,
= Max rating @125°C
= ±20V
=15V, I
=25V, f=1 MHz, V
=10V
= 44V, I
Figure
Test conditions
Test conditions
Test conditions
GS
, I
D
D
D
15)
D
GS
D
= 40A
= 40A
= 40A,
GS
= 250µA
= 80A
=10V
= 0
GS
=0
Min.
Min.
Min.
55
2
0.005 0.0065
4400
1020
Typ.
60.5
Typ.
Typ.
150
350
142
155
125
29
27
65
3
Max.
Max.
Max.
±100
189
10
1
4
Unit
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
S
V
V
Ω