IRF540NPBF International Rectifier, IRF540NPBF Datasheet - Page 5

• Manufacturer Part Number: IRF540NPBF
• Description: MOSFET N-CH 100V 33A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF540NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Input Capacitance (ciss) @ Vds: 1960pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 33 A
• Gate Charge, Total: 71 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 130 W
• Resistance, Drain To Source On: 44 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 39 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 21 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 33 A
• Mounting Style: Through Hole
• Gate Charge Qg: 47.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF540NPBF

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35
30
25
20
15
10
5
0
Fig 9. Maximum Drain Current Vs.
25
0.01
0.1
10
0.00001
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.20
0.10
0.05
0.02
0.01
T , Case Temperature ( C)
Case Temperature
C
75
(THERMAL RESPONSE)
0.0001
100
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
150
1
0.001
175
V
90%
10%
V
Fig 10b. Switching Time Waveforms
0.01
DS
GS
Fig 10a. Switching Time Test Circuit
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
R
d(on)
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
G
V
V
GS
GS
J
t
r
V
IRF540NPbF
DM
DS
x Z
1
0.1
thJC
P
2
DM
+ T
D.U.T.
C
t
1
t
d(off)
R
t
2
D
t
f
1
+
-
V
DD
5