IRF6648 International Rectifier, IRF6648 Datasheet - Page 5

• Manufacturer Part Number: IRF6648
• Description: MOSFET N-CH 60V 86A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6648

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 4.9V @ 150µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2120pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MN
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 m Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 86 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 13 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 29 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 8. Typical On-Resistance vs. Gate Voltage
1000
1000
100
100
0.1
Fig12. Maximum Safe Operating Area
10
10
60
50
40
30
20
10
1
0
0
1
0.0
4
0
Tc = 25°C
Tj = 150°C
Single Pulse
T J = 150°C
T J = 25°C
T J = -40°C
0.2
V GS, Gate -to -Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
6
0.4
OPERATION IN THIS AREA
LIMITED BY R DS (on)
T J = 25°C
8
1
0.6
10
10msec
T J = 125°C
1msec
0.8
100µsec
12
10
1.0
V GS = 0V
I D = 17A
14
1.2
100
1.4
16
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 9. Typical On-Resistance vs. Drain Current
200
180
160
140
120
100
6.0
5.0
4.0
3.0
2.0
30
25
20
15
10
80
60
40
20
Fig 11. Typical Threshold Voltage vs.
0
5
0
-75 -50 -25
25
0
I D = 150µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
Starting T J , Junction Temperature (°C)
Junction Temperature
50
20
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
T J , Temperature ( °C )
I D , Drain Current (A)
0
75
40
25
50
100
60
I D
BOTTOM 34A
75 100 125 150
IRF6648
T J = 25°C
125
80
TOP
12A
18A
150
100
5