IRF1405STRRPBF International Rectifier, IRF1405STRRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF1405STRRPBF
• Description: MOSFET N-CH 55V 131A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1405STRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 131A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 5480pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 131A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 5.3 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 131 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 110 ns
• Gate Charge Qg: 170 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 190 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
1000
100
100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
4
TOP
BOTTOM
V
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
, Drain-to-Source Voltage (V)
6
, Gate-to-Source Voltage (V)
T = 25 C
1
J
°
4.5V
8
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
10
= 25V
T = 175 C
J
°
10
°
100
12
1000
100
Fig 2. Typical Output Characteristics
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
169A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
1
20 40 60 80 100 120 140 160 180
4.5V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100