IRF6646 International Rectifier, IRF6646 Datasheet - Page 4

• Manufacturer Part Number: IRF6646
• Description: MOSFET N-CH 80V 12A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6646

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4.9V @ 150µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2060pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MN
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.5 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 12 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 20 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF6646
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
Fig 6. Typical Transfer Characteristics
10000
Fig 4. Typical Output Characteristics
1000
1000
100
100
100
0.1
10
10
1
1
0.1
3
1
V DS = 10V
≤ 60µs PULSE WIDTH
T J = 150°C
T J = 25°C
T J = -40°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4
6.0V
1
C rss
C iss
C oss
5
f = 1 MHZ
≤ 60µs PULSE WIDTH
Tj = 25°C
10
6
10
TOP
BOTTOM
7
VGS
15V
10V
8.0V
7.0V
6.0V
100
100
8
Fig 7. Normalized On-Resistance vs. Temperature
Fig 9. Typical On-Resistance vs. Drain Current
100
2.0
1.5
1.0
0.5
10
45
40
35
30
25
20
15
10
1
5
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
10
Fig 5. Typical Output Characteristics
I D = 12A
V GS = 10V
T J = 25°C
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
30
I D , Drain Current (A)
1
6.0V
50
≤ 60µs PULSE WIDTH
Tj = 150°C
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
70
10
TOP
BOTTOM
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90
VGS
15V
10V
8.0V
7.0V
6.0V
100
110