IRL3713STRLPBF International Rectifier, IRL3713STRLPBF Datasheet - Page 7

• Manufacturer Part Number: IRL3713STRLPBF
• Description: MOSFET N-CH 30V 260A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3713STRLPBF

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 330W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 110nC @ 4.5V
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 260A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 38A, 10V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 200A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 200 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 75 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 14. For N-Channel HEXFET
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
®
D =
-
Power MOSFETs
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
IRL3713/S/L
7