IRF1404ZSPBF International Rectifier, IRF1404ZSPBF Datasheet - Page 7

• Manufacturer Part Number: IRF1404ZSPBF
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF1404ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 200 A
• Gate Charge, Total: 75 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 230 W
• Resistance, Drain To Source On: 2.7 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 30 ns
• Time, Turn-on Delay: 19 ns
• Transconductance, Forward: 170 S
• Voltage, Breakdown, Drain To Source: 40 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 75A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0037Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 190A
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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10000
1000
100
10
400
300
200
100
1.0E-08
1
0
Fig 16. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
50
Vs. Temperature
1.0E-07
TOP
BOTTOM 10% Duty Cycle
I D = 75A
75
0.05
0.01
0.10
Fig 15. Typical Avalanche Current Vs.Pulsewidth
100
Single Pulse
1.0E-06
125
150
1.0E-05
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
t
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
every part type.
not exceeded.
Figures 12a, 12b.
avalanche pulse.
voltage increase during avalanche).
T
D = Duty cycle in avalanche = t
Z
av =
av
thJC
jmax
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
1.0E-04
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
av
Allowed avalanche Current vs
avalanche
assuming ∆ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
AS (AR)
= 2DT/ [1.3·BV·Z
1.0E-03
= P
D (ave)
jmax
pulsewidth,
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
1.0E-02
]
thJC
tav
jmax
1.0E-01
7
is