IRFS4228TRLPBF International Rectifier, IRFS4228TRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRFS4228TRLPBF
• Description: MOSFET N-CH 150V 83A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4228TRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 83A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 107nC @ 10V
• Input Capacitance (ciss) @ Vds: 4530pF @ 25V
• Power - Max: 330W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 83A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFS4228TRLPBFTR

IRFS/SL4228PbF
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 11. Maximum Drain Current vs. Case Temperature
4
100000
10000
1000
140
120
100
100
10
80
60
40
20
90
80
70
60
50
40
30
20
10
Fig 7. Typical E
0
0
20
25
1
L = 220nH
C = 0.3µF
C = 0.2µF
40
C = 0.1µF
V DS , Drain-to-Source Voltage (V)
50
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J , Junction Temperature (°C)
60
Temperature (°C)
10
75
PULSE
C iss
C oss
C rss
80
100
f = 1 MHZ
vs.Temperature
100
100
125
120
150
140
1000
175
160
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 8. Typical Source-Drain Diode Forward Voltage
1000
1000
12.0
10.0
100
100
0.1
8.0
6.0
4.0
2.0
0.0
10
10
1
1
0.2
Fig 12. Maximum Safe Operating Area
0
1
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 50A
10
0.4
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
T J = 175°C
10msec
Q G , Total Gate Charge (nC)
20
0.6
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 120V
V DS = 75V
V DS = 30V
10
30
0.8
1msec
100µsec
T J = 25°C
40
1.0
50
100
1.2
V GS = 0V
60
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1.4
70
1000
1.6
80