IRF7779L2TR1PBF International Rectifier, IRF7779L2TR1PBF Datasheet

IRF7779L2TR1PBF

Manufacturer Part Number

IRF7779L2TR1PBF

Description

MOSFET N-CH 150V 375A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7779L2TRPBF.pdf (11 pages)

Specifications of IRF7779L2TR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

11 mOhm @ 40A, 10V

Drain To Source Voltage (vdss)

150V

Current - Continuous Drain (id) @ 25° C

375A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

150nC @ 10V

Input Capacitance (ciss) @ Vds

6660pF @ 25V

Power - Max

3.3W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric L8

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

150 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

67 A

Power Dissipation

125 W

Gate Charge Qg

97 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7779L2TR1PBFTR

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Applicable DirectFET Outline and Substrate Outline

Description

The IRF7779L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

achieve the lowest on-state resistance in a package that has a footprint smaller than a D

is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package

allows dual sided cooling to maximize thermal transfer in power systems.

The IRF7779L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses

in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system

reliability improvements, and makes this device ideal for high performance power converters.

www.irf.com

Absolute Maximum Ratings

Primary Switch Socket

RoHS Compliant, Halogen Free

Lead-Free (Qualified up to 260°C Reflow)

Ideal for High Performance Isolated Converter

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

Industrial Qualified

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

50.00

40.00

30.00

20.00

10.00

0.00

= 25°C

= 100°C

= 25°C

Fig 1. Typical On-Resistance vs. Gate Voltage

4.0

6.0

V GS , Gate-to-Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

8.0

10.0

12.0

T J = 125°C

T J = 25°C

I D = 40A

Parameter

14.0

@ 10V

16.0

(Silicon Limited)

(Package Limited)

„

…

†

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

measured with thermocouple mounted to top (Drain) of part.

20.00

16.00

12.00

8.00

= 25°C, L = 0.33mH, R

Fig 2. Typical On-Resistance vs. Drain Current

PAK and only 0.7 mm profile. The DirectFET package

T C = 25°C

150V min ±20V max

V GS = 7.0V

V GS = 8.0V

V GS = 10V

V GS = 15V

DirectFET™ Power MOSFET ‚

97nC

g tot

DSS

IRF7779L2TR1PbF

IRF7779L2TRPbF

I D , Drain Current (A)

Max.

150

375

270

±20

33nC

= 25Ω, I

DirectFET™ ISOMETRIC

= 40A.

9.0mΩ@ 10V

PD -

110

4.0V

DS(on)

packaging to

gs(th)

Units

97435

11/17/09

Related parts for IRF7779L2TR1PBF

IRF7779L2TR1PBF Summary of contents

Page 1

... Fig 2. Typical On-Resistance vs. Drain Current „ T measured with thermocouple mounted to top (Drain) of part. C … Repetitive rating; pulse width limited by max. junction temperature. † Starting T = 25° 0.33mH 97435 PD - IRF7779L2TRPbF IRF7779L2TR1PbF DirectFET™ Power MOSFET ‚ DSS GS DS(on) 150V min ±20V max 9.0mΩ@ 10V tot ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV /ΔT Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 100°C Power Dissipation D C Power Dissipation 25° Peak Soldering Temperature Operating Junction and J T Storage Temperature ...

Page 4

VGS TOP 15V 10V 8.0V 7.5V 7.0V 6.5V 100 6.0V BOTTOM 5.5V 10 ≤ 60μs PULSE WIDTH Tj = 25°C 5. Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 ...

Page 5

175°C 100 25° -40° 0.1 0.2 0.4 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 280 TOP Single ...

Page 7

DUT 0 20K 1K S Fig 18a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 20a. Switching Time ...

Page 8

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations GATE D = DRAIN S = SOURCE www.irf.com ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking Note: For the most current drawing please refer to IR website at www.irf.com DIMENSIONS IMPERIAL METRIC CODE MAX MIN MIN A 9.15 0.356 ...

Page 10

DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: CONTROLLING DIMENSIONS NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF7779L2PBF). REEL DIMENSIONS STANDARD OPTION (QTY 4000) METRIC IMPERIAL CODE MIN MAX MIN ...

Page 11

... Part number Package Type IRF7779L2TRPbF DirectFET2 Large Can IRF7779L2TR1PbF DirectFET2 Large Can † Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. ...

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