IRF8010PBF International Rectifier, IRF8010PBF Datasheet - Page 8

• Manufacturer Part Number: IRF8010PBF
• Description: MOSFET N-CH 100V 80A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF8010PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3830pF @ 25V
• Power - Max: 260W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 80 A
• Gate Charge, Total: 81 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 260 W
• Resistance, Drain To Source On: 12 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 61 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 82 V
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Mounting Style: Through Hole
• Gate Charge Qg: 81 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.015Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF8010PBF

IRF8010PbF
TO-220 package is not recommended for Surface Mount Application.

‚
ƒ
Dimensions are shown in millimeters (inches)
Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
8
Repetitive rating; pulse width limited by
I
T
max. junction temperature.
Starting T
SD
I
AS
J
≤ 175°C.
≤ 45A, di/dt ≤ 110A/µs, V
= 45A.
EXAMPLE:
NOTES:
J
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
= 25°C, L = 0.31mH, R
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
2.87 (.113)
2.62 (.103)
3X
2.54 (.100)
1.40 (.055)
1.15 (.045)
2X
T HIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
10.54 (.415)
10.29 (.405)
1
2 3
DD
4
≤ V
3X
0.36 (.014)
6.47 (.255)
6.10 (.240)
0.93 (.037)
0.69 (.027)
G
(BR)DSS
1.15 (.045)
4.06 (.160)
3.55 (.140)
= 25Ω,
MIN
This product has been designed and qualified for the Industrial market.
3.78 (.149)
3.54 (.139)
M B A M
- A -
,
„
…
†
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
junction temperature. Package limitation current is 75A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
Calculated continuous current based on maximum allowable
as C
oss
Visit us at www.irf.com for sales contact information.07/04
4.69 (.185)
4.20 (.165)
INT ERNAT IONAL
Data and specifications subject to change without notice.
eff. is a fixed capacitance that gives the same charging time
oss
RECT IFIER
AS S EMBLY
LOT CODE
Qualification Standards can be found on IR’s Web site.
while V
LOGO
- B -
DS
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
3X
is rising from 0 to 80% V
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
0.55 (.022)
0.46 (.018)
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
PART NUMBER
TAC Fax: [phone]
DSS
.
www.irf.com