IRFP3415PBF International Rectifier, IRFP3415PBF Datasheet
IRFP3415PBF
Specifications of IRFP3415PBF
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IRFP3415PBF Summary of contents
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... Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- srew Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com IRFP3415PbF HEXFET TO-247AC Max. @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– ...
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... IRFP3415PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...
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... TOP BOTTOM 100 o 10 100 1 3 2.5 2.0 1.5 ° J 1.0 0.5 = 50V 0.0 -60 -40 - IRFP3415PbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.5V 4.5V 4.5V 20us PULSE WIDTH 175 Drain-to-Source Voltage (V) DS 37A V = 10V 100 120 140 160 180 ...
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... IRFP3415PbF 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss C rss 1000 Drain-to-Source Voltage (V) DS 1000 100 T = 175 0.1 0.2 0.6 1.0 V ,Source-to-Drain Voltage ( SHORTED 100 0 1000 OPERATION IN THIS AREA LIMITED 100 175 Single Pulse 1.4 1.8 ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRFP3415PbF + - ≤ 1 ≤ 0 d(off thJC C ...
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... IRFP3415PbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 1400 1200 15V 1000 DRIVER 800 + V DD 600 - A 400 200 0 25 Starting T , Junction Temperature ( C) V (BR)DSS Fig 12c. Maximum Avalanche Energy Same Type as D ...
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... R G • Driver same type as D.U.T. • I controlled by Duty Factor "D" SD • D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs IRFP3415PbF + =10V ...
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... IRFP3415PbF EXAMPLE: THIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 INTERNATIONAL RECTIFIER IRFPE30 LOGO ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...