IRF3415PBF International Rectifier, IRF3415PBF Datasheet - Page 3

• Manufacturer Part Number: IRF3415PBF
• Description: MOSFET N-CH 150V 43A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3415PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 43 A
• Gate Charge, Total: 200 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.042 Ohm
• Resistance, Thermal, Junction To Case: 0.75 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 71 ns
• Time, Turn-on Delay: 12 ns
• Transconductance, Forward: 19 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Drain To Source: 150 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 43 A
• Mounting Style: Through Hole
• Gate Charge Qg: 133.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3415PBF

1000
1000
100
100
10
10
4
1
TOP
BOTTOM
V
V
DS
5
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
4.5V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
J
6
4.5V
°
10
7
20us PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
T = 175 C
J
8
= 50V
o
°
9
100
10
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
37A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
4.5V
T , Junction Temperature ( C)
, Drain-to-Source Voltage (V)
J
20 40 60 80 100 120 140 160 180
10
4.5V
20us PULSE WIDTH
T = 175 C
J
o
V
o
GS
=
10V
100