IRFB41N15DPBF International Rectifier, IRFB41N15DPBF Datasheet - Page 3

• Manufacturer Part Number: IRFB41N15DPBF
• Description: MOSFET N-CH 150V 41A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB41N15DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2520pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB41N15DPBF

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1000
1000
Fig 3. Typical Transfer Characteristics
100
100
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
6
TOP
BOTTOM
T = 175 C
J
V
V
DS
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
GS
7
, Drain-to-Source Voltage (V)
°
, Gate-to-Source Voltage (V)
T = 25 C
6.0V
J
1
8
°
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
9
J
DS
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
10
= 25V
°
10
100
11
1000
Fig 2. Typical Output Characteristics
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
41A
DS
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
T , Junction Temperature ( C)
vs. Temperature
J
, Drain-to-Source Voltage (V)
1
20 40 60 80 100 120 140 160 180
6.0V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100