IRFP2907ZPBF International Rectifier, IRFP2907ZPBF Datasheet - Page 6

• Manufacturer Part Number: IRFP2907ZPBF
• Description: MOSFET N-CH 75V 90A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP2907ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Current, Drain: 170 A
• Gate Charge, Total: 180 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 310 W
• Resistance, Drain To Source On: 4.5 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 97 ns
• Time, Turn-on Delay: 19 ns
• Transconductance, Forward: 180 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 170 A
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFP2907ZPBF

0
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
I
AS
V
G
R G
20V
V
V DS
GS
Q
1K
GS
t p
t p
I AS
D.U.T
0.01
L
Q
Charge
Q
V
GD
G
DUT
(BR)DSS
L
15V
DRIVER
+
-
V DD
VCC
A
Fig 14. Threshold Voltage vs. Temperature
2500
2000
1500
1000
4.0
3.5
3.0
2.5
2.0
1.5
1.0
500
Fig 12c. Maximum Avalanche Energy
0
-75 -50 -25
25
Starting T J , Junction Temperature (°C)
50
I D = 250µA
vs. Drain Current
T J , Temperature ( °C )
0
75
25
50
100
75 100 125 150 175 200
TOP
BOTTOM 90A
www.irf.com
125
150
I D
16A
25A
175