IRFB52N15DPBF International Rectifier, IRFB52N15DPBF Datasheet

IRFB52N15DPBF

Manufacturer Part Number

IRFB52N15DPBF

Description

MOSFET N-CH 150V 51A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRFS52N15DPBF.pdf (11 pages)

2.IRFB52N15DPBF.pdf (3 pages)

Specifications of IRFB52N15DPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

32 mOhm @ 36A, 10V

Drain To Source Voltage (vdss)

150V

Current - Continuous Drain (id) @ 25° C

51A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

89nC @ 10V

Input Capacitance (ciss) @ Vds

2770pF @ 25V

Power - Max

3.8W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Channel Type

Current, Drain

51 A

Gate Charge, Total

60 nC

Package Type

TO-220AB

Polarization

N-Channel

Power Dissipation

230 W

Resistance, Drain To Source On

0.032 Ohm

Resistance, Thermal, Junction To Case

0.47 °C/W

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

28 ns

Time, Turn-on Delay

16 ns

Transconductance, Forward

19 S

Voltage, Breakdown, Drain To Source

150 V

Voltage, Drain To Source

150 V

Voltage, Forward, Diode

1.5 V

Voltage, Gate To Source

±30 V

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.032Ohm

Drain-source On-volt

150V

Gate-source Voltage (max)

±30V

Drain Current (max)

51A

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

3 +Tab

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

150 V

Gate-source Breakdown Voltage

30 V

Continuous Drain Current

60 A

Mounting Style

Through Hole

Gate Charge Qg

60 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFB52N15DPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFB52N15DPBF

Manufacturer:

Quantity:

167

Company:

H&T Electronics

Part Number:

IRFB52N15DPBF

Quantity:

9 000

Company:

H&T Electronics

Part Number:

IRFB52N15DPBF

Quantity:

10 000

Current page: 1 of 11
Download datasheet (326Kb)

Notes through ‡

Benefits

www.irf.com

Applications

Absolute Maximum Ratings

Thermal Resistance

* R

dv/dt

STG

cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.

@ T

Low Gate-to-Drain Charge to

Reduce\ Switching Losses

Fully Characterized Capacitance

Design, (See App. Note AN1001)

Fully Characterized Avalanche

Voltage and Current

Lead-Free

High frequency DC-DC converters

Plasma Display Panel

Including Effective C

(end of life) for D

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation ‡

Linear Derating Factor ‡

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ƒ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw†

Junction-to-Case

Case-to-Sink, Flat, Greased Surface †

Junction-to-Ambient†

Junction-to-Ambient‡

are on page 11

Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature

OSS

Parameter

to Simplify

@ 10V ‡

DS (Avalanche)

DS(ON)

max

IRFB52N15DPbF

max @ 10V

TO-220AB

min.

Key Parameters

300 (1.6mm from case )

Typ.

0.50

–––

HEXFET Power MOSFET

-55 to + 175

10 lbf•in (1.1N•m)

IRFS52N15DPbF

Max.

230*

240

± 30

51*

36*

1.5*

3.8

5.5

Pak

150

200

175

Max.

0.47*

–––

IRFSL52N15DPbF

PD - 97002A

TO-262

Units

W/°C

09/22/10

°C/W

V/ns

°C

Related parts for IRFB52N15DPBF

IRFB52N15DPBF Summary of contents

Page 1

... Notes through ‡ are on page 11 www.irf.com min. DS (Avalanche) R max @ 10V DS(ON) T max J to Simplify TO-220AB IRFB52N15DPbF @ 10V ‡ 10V ‡ 97002A HEXFET Power MOSFET Key Parameters 150 200 m 32 175 2 D Pak TO-262 ...

Page 2

... IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100. 25°C 10. 15V 300µs PULSE WIDTH 1.00 5.0 7.0 9.0 11 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF 1000 TOP 100 BOTTOM 5.0V 10 5.0V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 3 2.5 2 175° ...

Page 4

... IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF 100000 0V, C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.00 100. 175°C 10. 25°C 1.00 0.10 0.0 0.5 1.0 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 36A MHZ SHORTED ...

Page 5

... D = 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 0.01 (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 ...

Page 6

... IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 900 15V 720 DRIVER + 540 360 180 Starting Tj, Junction Temperature Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit ...

Page 7

... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF + ƒ - „ P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® ...

Page 8

... IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS SEMBLY LINE "C" Note: "P" inass embly line position indicates "Lead - Free" TO-220 package is not recommended for Surface Mount Application. Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2 ...

Page 9

... AS SEMBLED ON WW 02, 2000 EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF INT ERNAT IONAL RECT IFIER F530S LOGO AS S EMBLY LOT CODE ...

Page 10

... IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 ASSEMBLY LINE "C" Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ ...

Page 11

... T 175°C. J „ Pulse width 300µs; duty cycle 2%. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 11.60 (.457) 1.85 (.073) 11.40 (.449) 1.65 (.065) 1.75 (.069) 10 ...

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