IRFB3006PBF International Rectifier, IRFB3006PBF Datasheet - Page 6

• Manufacturer Part Number: IRFB3006PBF
• Description: MOSFET N-CH 60V 195A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3006PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 195A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 8970pF @ 50V
• Power - Max: 375W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 270 A
• Power Dissipation: 375 W
• Mounting Style: Through Hole
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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4.0
3.5
3.0
2.5
2.0
1.5
1.0
Fig 16. Threshold Voltage Vs. Temperature
20
16
12
8
4
0
-75 -50 -25
100
200
300
T J , Temperature ( °C )
0
di f / dt - (A / μs)
25
400
50
500
I F = 170A
V R = 51V
T J = 125°C
T J = 25°C
75
700
600
500
400
300
200
100
600
I D = 1.0A
I D = 1.0mA
I D = 250μA
100 125 150 175
0
100
700
200
800
f
300
di f / dt - (A / μs)
400
500
I F = 170A
V R = 51V
T J = 125°C
T J = 25°C
600
700
700
600
500
400
300
200
100
20
16
12
0
8
4
0
800
100
100
f
200
200
300
300
di f / dt - (A / μs)
di f / dt - (A / μs)
400
400
500
500
I F = 112A
V R = 51V
T J = 125°C
T J = 25°C
I F = 112A
V R = 51V
T J = 125°C
T J = 25°C
600
600
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700
700
f
800
800
f