IRFP4332PBF International Rectifier, IRFP4332PBF Datasheet

MOSFET N-CH 250V 57A TO-247AC

IRFP4332PBF

Manufacturer Part Number
IRFP4332PBF
Description
MOSFET N-CH 250V 57A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFP4332PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
33 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
57A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
5860pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Polarity
N Channel
Continuous Drain Current Id
57A
Drain Source Voltage Vds
300V
On Resistance Rds(on)
29mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
57 A
Power Dissipation
360 W
Mounting Style
Through Hole
Gate Charge Qg
99 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP4332PBF
Manufacturer:
RENESAS
Quantity:
5 100
Part Number:
IRFP4332PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFP4332PBF
Quantity:
2 000
Features
l
l
l
l
l
l
l
l
Description
Notes  through † are on page 9
www.irf.com
Absolute Maximum Ratings
V
I
I
I
I
P
P
T
T
Thermal Resistance
R
R
R
175°C Operating Junction Temperature for
D
D
DM
RP
Energy Recovery and Pass Switch Applications
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Reliable Operation
Improved Ruggedness
and Reliability
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Low E
Low Q
High Repetitive Peak Current Capability for
Short Fall & Rise Times for Fast Switching
Repetitive Avalanche Capability for Robustness
J
STG
GS
D
D
θJC
θCS
θJA
@ T
@ T
@T
@T
@ T
HEXFET
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
PULSE
G
= 100°C
for Fast Response
MOSFET
®
Rating to Reduce Power
Power MOSFET
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
f
Parameter
Parameter
f
gh
MOSFET
GS
GS
PULSE
PDP SWITCH
@ 10V
@ 10V
V
V
R
T
DS
DS (Avalanche)
J
DS(ON)
G
max
min
Gate
G
typ. @ 10V
typ.
Typ.
0.24
–––
–––
Key Parameters
10lb
S
D
-40 to + 175
IRFP4332PbF
x
in (1.1N
Max.
230
120
360
180
300
±30
2.4
57
40
Drain
D
x
m)
MOSFET
Max.
0.42
–––
40
250
300
175
29
D
TO-247AC
Source
S
Units
Units
W/°C
°C/W
°C
W
N
V
A
m
°C
G
V
V
D
S
1
12/15/09

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IRFP4332PBF Summary of contents

Page 1

... Notes  through † are on page 9 www.irf.com PDP SWITCH V min (Avalanche) R typ. @ 10V DS(ON) T max Gate MOSFET PULSE Parameter @ 10V GS @ 10V GS gh Parameter f f IRFP4332PbF Key Parameters 250 typ. 300 m 29 175 TO-247AC D S Drain Source MOSFET Max. Units ± 230 120 360 W 180 2 ...

Page 2

... IRFP4332PbF Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...

Page 3

... V DS, Drain-to -Source Voltage (V) Fig 5. Typical E vs. Drain-to-Source Voltage PULSE www.irf.com 100 7.0 8.0 Fig 4. Normalized On-Resistance vs. Temperature 190 200 IRFP4332PbF 1000 VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V 100 BOTTOM 5.5V 5.5V 10 ≤ 60µs PULSE WIDTH Tj = 175° ...

Page 4

... IRFP4332PbF 1400 L = 220nH 1200 C= 0.3µF C= 0.2µF C= 0.1µF 1000 800 600 400 200 100 Temperature (°C) Fig 7. Typical E vs.Temperature PULSE 10000 0V MHZ C iss = SHORTED C rss = C gd 8000 C oss = Ciss 6000 4000 Coss 2000 Crss 100 Drain-to-Source Voltage (V) Fig 9. Typical Capacitance vs.Drain-to-Source Voltage ...

Page 5

... 35A 9 10 Fig 14. Maximum Avalanche Energy Vs. Temperature R τ J τ J τ 1 τ 1 Ci= τi/Ri Ci= τi/Ri 0.0001 0.001 Rectangular Pulse Duration (sec) IRFP4332PbF 1000 TOP 800 BOTTOM 600 400 200 100 125 Starting Junction Temperature (°C) 180 ton= 1µs 160 Duty cycle = 0.25 ...

Page 6

... IRFP4332PbF D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18 D.U 20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 20a. Gate Charge Test Circuit ...

Page 7

... A RG DRIVER L B Ipulse RG DUT Fig 21a. t and E Test Circuit st PULSE Fig 21c. E www.irf.com PULSE A C PULSE B VCC Fig 21b. t Test Waveforms PULSE IRFP4332PbF t ST Test Waveforms st 7 ...

Page 8

... IRFP4332PbF TO-247AC package is not recommended for Surface Mount Application. 8 Dimensions are shown in millimeters (inches) www.irf.com ...

Page 9

... This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 12/2009 IRFP4332PbF 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & ...

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