IRFP3077PBF International Rectifier, IRFP3077PBF Datasheet - Page 3

• Manufacturer Part Number: IRFP3077PBF
• Description: MOSFET N-CH 75V 120A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP3077PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 50V
• Power - Max: 340W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 120A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 2.8mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 340 W
• Mounting Style: Through Hole
• Gate Charge Qg: 160 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
16000
12000
8000
4000
1000
1000
100
100
10
10
0
1
0.1
2.0
Fig 3. Typical Transfer Characteristics
1
Fig 1. Typical Output Characteristics
T J = 175°C
V DS , Drain-to-Source Voltage (V)
3.0
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4.0
1
Ciss
T J = 25°C
Coss
Crss
4.5V
V DS = 25V
≤ 60μs PULSE WIDTH
5.0
≤ 60μs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
10
6.0
TOP
BOTTOM
7.0
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
8.0
100
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
2.5
2.0
1.5
1.0
0.5
20
16
12
10
8
4
0
0.1
-60 -40 -20 0
0
Fig 2. Typical Output Characteristics
I D = 75A
TOP
BOTTOM
I D = 75A
V GS = 10V
40
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
80
V DS = 60V
VDS= 38V
VDS= 17V
1
20 40 60 80 100 120 140 160 180
120
≤ 60μs PULSE WIDTH
Tj = 175°C
160
4.5V
10
200
240
100
280
3