IRFP90N20DPBF International Rectifier, IRFP90N20DPBF Datasheet - Page 5

• Manufacturer Part Number: IRFP90N20DPBF
• Description: MOSFET N-CH 200V 94A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP90N20DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 56A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 94A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 6040pF @ 25V
• Power - Max: 580W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Channel Type: N
• Current, Drain: 94 A
• Gate Charge, Total: 180 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 580 W
• Resistance, Drain To Source On: 0.023 Ohm
• Resistance, Thermal, Junction To Case: 0.26 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 43 ns
• Time, Turn-on Delay: 23 ns
• Transconductance, Forward: 39 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 94 A
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFP90N20DPBF

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0.001
0.01
100
0.1
80
60
40
20
0.00001
0
1
25
Fig 9. Maximum Drain Current vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
Case Temperature
C
LIMITED BY PACKAGE
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
( C)
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
t
d(on)
1. Duty factor D =
2. Peak T
Notes:
IRFP90N20DPbF
t
r
≤ 0.1 %
≤ 1
J
= P
DM
x Z
t / t
1
0.1
thJC
P
2
t
d(off)
DM
+ T
C
t
t
1
f
t
2
+
-
5
1