NTJS4160NT1G ON Semiconductor, NTJS4160NT1G Datasheet - Page 2

• Manufacturer Part Number: NTJS4160NT1G
• Description: MOSFET N-CH 30V 1.8A SC88-6
• Manufacturer: ON Semiconductor

Specifications of NTJS4160NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 2.75nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.2 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 620 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJS4160NT1G; NTJS4160NT1GOSTR

3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface mounted on FR4 board using the minimum recommended pad size.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 6)
DRAIN-SOURCE DIODE CHARACTERISTICS
THERMAL RESISTANCE RATINGS
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient - t ≤ 1 s (Note 3)
Junction-to-Ambient – Steady State (Note 4)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
Parameter
(T
J
V
V
= 25°C unless otherwise stated)
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
Q
t
(BR)DSS
t
C
C
d(OFF)
GS(TH)
C
I
I
G(TOT)
Q
Q
d(ON)
Q
DS(on)
V
g
GSS
G(TH)
t
DSS
OSS
T
RSS
RR
T
ISS
t
FS
GS
GD
t
SD
RR
r
f
a
b
/T
/T
J
J
http://onsemi.com
V
GS
V
V
V
V
NTJS4160N
V
V
I
V
V
V
I
V
V
V
D
GS
V
GS
I
S
GS
DS
GS
GS
D
DS
DS
GS
GS
GS
GS
GS
= 0 V, dI
= 250 mA, ref to 25°C
= 1.3 A
= 1.0 A, R
= 4.5 V, V
= 24 V
= 4.5 V, V
Test Condition
= 0 V,
= 0 V, f = 1.0 MHz,
= 0 V,
= 0 V, V
= 0 V, V
= V
= 0 V, I
= 4.5 V, I
= 5.0 V, I
= 10 V, I
V
I
2
I
D
S
DS
DS
= 2.6 A
= 1.3 A
S
, I
= 10 V
/dt = 100 A/ms,
D
GS
GS
D
G
D
DS
DD
= 250 mA
D
D
= 250 mA
T
T
= 6.0 W
T
= 2.6 A
T
= +20 V
= -20 V
= 2.2 A
= 3.0 A
J
J
= 15 V,
= 15 V,
J
J
= 125°C
= 125°C
= 25°C
= 25°C
Symbol
Min
R
R
R
0.8
30
qJA
qJA
qJA
-5.0
2.75
0.37
0.87
10.9
0.79
0.67
10.3
Typ
230
4.2
1.1
8.7
7.2
1.9
7.2
3.1
4.0
20
45
65
62
39
Max
200
132
420
-200
Max
100
1.0
2.4
4.0
1.2
10
60
85
15
13
19
°C/W
Unit
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
ns
ns
V
V
S
V