2N7000RLRAG ON Semiconductor, 2N7000RLRAG Datasheet

2N7000RLRAG

Manufacturer Part Number

2N7000RLRAG

Description

MOSFET N-CH 60V 200MA TO-92

Manufacturer

ON Semiconductor

Datasheets

1.2N7000G.pdf (4 pages)

2.2N7000RLRAG.pdf (4 pages)

3.2N7000RLRAG.pdf (3 pages)

Specifications of 2N7000RLRAG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

5 Ohm @ 500mA, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

200mA

Vgs(th) (max) @ Id

3V @ 1mA

Input Capacitance (ciss) @ Vds

60pF @ 25V

Power - Max

350mW

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

5 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

0.0001 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.2 A

Power Dissipation

350 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Current, Drain

200 mA

Package Type

TO-92 (TO-226)

Polarization

N-Channel

Resistance, Drain To Source On

5 Ohms

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

10 ns

Time, Turn-on Delay

10 ns

Transconductance, Forward

100 Micromhos

Voltage, Breakdown, Drain To Source

60 V

Voltage, Gate To Source

±20 VDC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

2N7000RLRAGOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N7000RLRAG

Manufacturer:

Quantity:

8 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N7000RLRAG

Manufacturer:

ON Semiconductor

Quantity:

1 400

Company:

Meier Automation Equipment Co., Limited

Part Number:

2N7000RLRAG

Manufacturer:

ONSEMI

Quantity:

20 000

Current page: 1 of 4
Download datasheet (72Kb)

2N7000

Small Signal MOSFET

200 mAmps, 60 Volts

N-Channel TO-92

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb-Free strategy and soldering details, please

October, 2007 - Rev. 7

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Drain Source Voltage

Drain-Gate Voltage (R

Gate-Source Voltage

Drain Current

Total Power Dissipation @ T

Derate above 25°C

Operating and Storage Temperature

Range

Thermal Resistance, Junction-to-Ambient

Maximum Lead Temperature for

Soldering Purposes, 1/16″ from case

for 10 seconds

AEC Qualified

PPAP Capable

Pb-Free Packages are Available*

- Continuous

- Non-repetitive (t

- Continuous

- Pulsed

Characteristic

Rating

≤ 50 ms)

= 1.0 MW)

Preferred Device

= 25°C

Symbol

GSM

DSS

DGR

, T

qJA

stg

-55 to +150

Value

Max

± 20

± 40

200

500

350

357

300

2.8

mW/°C

mAdc

°C/W

Unit

Vdc

Vpk

°C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

STYLE 22

CASE 29

TO-92

(Note: Microdot may be in either location)

ORDERING INFORMATION

AND PIN ASSIGNMENT

Source

STRAIGHT LEAD

MARKING DIAGRAM

http://onsemi.com

BULK PACK

200 mAMPS

1 2

60 VOLTS

DS(on)

N-Channel

= Assembly Location

= Year

= Work Week

= Pb-Free Package

AYWW G

Gate

7000

Publication Order Number:

= 5 W

Drain

TAPE & REEL

AMMO PACK

BENT LEAD

2N7000/D

Related parts for 2N7000RLRAG

2N7000RLRAG Summary of contents

Page 1

... Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 October, 2007 - Rev ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device 2N7000 2N7000G 2N7000RLRA 2N7000RLRAG 2N7000RLRMG 2N7000RLRPG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2N7000 = 25° ...

Page 3

T = 25°C A 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 1.0 2.0 3.0 4.0 5.0 6 DRAIN SOURCE VOLTAGE (VOLTS) DS Figure 1. Ohmic Region 2.4 2 ...

Page 4

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada ...

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