NTJS4151PT1G ON Semiconductor, NTJS4151PT1G Datasheet

NTJS4151PT1G

Manufacturer Part Number

NTJS4151PT1G

Description

MOSFET P-CH 20V 3.3A SC-88

Manufacturer

ON Semiconductor

Datasheet

1.NTJS4151PT1G.pdf (5 pages)

Specifications of NTJS4151PT1G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

60 mOhm @ 3.3A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

3.3A

Vgs(th) (max) @ Id

1.2V @ 250µA

Gate Charge (qg) @ Vgs

10nC @ 4.5V

Input Capacitance (ciss) @ Vds

850pF @ 10V

Power - Max

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Configuration

Single Quad Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.06 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

12 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 12 V

Continuous Drain Current

3.3 A

Power Dissipation

1000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTJS4151PT1GOS
NTJS4151PT1GOS
NTJS4151PT1GOSTR

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Current page: 1 of 5
Download datasheet (144Kb)

NTJS4151P

Trench Power MOSFET

−20 V, −4.2 A, Single P−Channel, SC−88

Features

•

Applications

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size

February, 2006 − Rev. 1

MAXIMUM RATINGS

Continuous Drain

THERMAL RESISTANCE RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

ESD

Junction−to−Ambient – Steady State

Junction−to−Ambient − t ≤ 5 s

Junction−to−Lead – Steady State

Utilization, Same as SC−70−6

Leading Trench Technology for Low R

SC−88 Small Outline (2x2 mm) for Maximum Circuit Board

Gate Diodes for ESD Protection

Pb−Free Package is Available

High Side Load Switch

Cell Phones, Computing, Digital Cameras, MP3s and PDAs

(Cu area = 1.127 in sq [1 oz] including traces).

Current (Note 1)

(Note 1)

(1/8” from case for 10 s)

Parameter

Human Body Model (HBM)

Steady

t ≤ 5 s

State

= 25°C unless otherwise stated)

= 10 ms

= 25 °C

= 85 °C

= 25 °C

(Note 1)

DS(ON)

Symbol

ESD

DSS

STG

qJA

qJL

Extending Battery Life

−55 to

Value

4000

−3.3

−2.4

−4.2

−1.3

Max

−20

±12

−10

150

260

125

1.0

°C/W

Unit

°C

†For information on tape and reel specifications,

NTJS4151PT1

NTJS4151PT1G

SC−88/SOT−363

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(BR)DSS

−20 V

CASE 419B

Device

(Note: Microdot may be in either location)

ORDERING INFORMATION

180 mW @ −1.8 V

47 mW @ −4.5 V

70 mW @ −2.5 V

http://onsemi.com

SC−88 (SOT−363)

DS(on)

(Pb−Free)

= Device Code

= Date Code

= Pb−Free Package

Package

SC−88

Top View

MARKING DIAGRAM &

Typ

PIN ASSIGNMENT

Publication Order Number:

3000 / Tape & Reel

TY M G

Shipping

NTJS4151P/D

−4.2 A

Max

†

Related parts for NTJS4151PT1G

NTJS4151PT1G Summary of contents

Page 1

... Device Package Shipping NTJS4151PT1 SC−88 3000 / Tape & Reel SC−88 NTJS4151PT1G 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...

Page 3

V = −1 −2 −2 −2 6 −1 −V , DRAIN−TO−SOURCE ...

Page 4

C ISS 750 500 250 Figure 7. Capacitance Variation 10000 d(off 1000 100 GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation Gate ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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