BS107G ON Semiconductor, BS107G Datasheet - Page 3

• Manufacturer Part Number: BS107G
• Description: MOSFET N-CH 200V 250MA TO-92
• Manufacturer: ON Semiconductor

Specifications of BS107G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 25V
• Power - Max: 350mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 250mA
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 14ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BS107G; BS107GOS

5.0
2.0
1.0
0.5
0.2
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
-55
0
0
-35
Figure 3. On Voltage versus Temperature
1.0
Figure 5. Transfer Characteristic
-15
2.0
V
V
GS
GS
T
J
, GATE - SOURCE VOLTAGE (VOLTS)
= 10 V
+5.0
V
, JUNCTION TEMPERATURE (°C)
3.0
GS
= 10 V
25
4.0
45
5.0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
65
6.0
85
7.0
Figure 7. Saturation Characteristic
250 mA
100 mA
1.0
105
8.0
V
DS
, DRAIN - SOURCE VOLTAGE (VOLTS)
BS107, BS107A
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125
9.0
145
2.0
10
3
200
180
160
140
120
100
0.7
0.6
0.5
0.3
0.2
0.1
0.4
80
60
40
20
3.0
0
0
0
C
2.0
rss
4.0
Figure 4. Capacitance Variation
4.0
Figure 6. Output Characteristic
V
V
10
DS
DS
10 V
, DRAIN - SOURCE VOLTAGE (VOLTS)
, DRAIN - SOURCE VOLTAGE (VOLTS)
6.0
5.0 V
4.0 V
3.0 V
10 V
5.0
8.0
20
10
30
12
14
V
GS
= 0 V
40
16
C
C
oss
iss
18
5.0 V
4.0 V
3.0 V
20
50