NTHS5443T1G ON Semiconductor, NTHS5443T1G Datasheet - Page 2

• Manufacturer Part Number: NTHS5443T1G
• Description: MOSFET P-CH 20V 3.6A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHS5443T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHS5443T1GOS; NTHS5443T1GOS; NTHS5443T1GOSTR

2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Static
Dynamic (Note 4)
Gate Threshold Voltage
Gate−Body Leakage
Zero Gate Voltage Drain Current
On−State Drain Current (Note 3)
Drain−Source On−State Resistance
(Note 3)
Forward Transconductance (Note 3)
Diode Forward Voltage (Note 3)
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Source−Drain Reverse Recovery Time
Maximum Junction−to−Ambient (Note 2)
Maximum Junction−to−Foot (Drain)
t v 5 s
Steady State
Steady State
Characteristic
Characteristic
(T
J
= 25°C unless otherwise noted)
Symbol
V
r
I
DS(on)
t
t
I
Q
I
Q
GS(th)
D(on)
V
d(on)
d(off)
GSS
DSS
Q
g
t
t
t
SD
GS
GD
rr
fs
r
f
G
http://onsemi.com
V
I
V
I
D
F
DS
V
V
V
V
V
V
DS
V
NTHS5443
V
V
^ −1.0 A, V
= −1.1 A, di/dt = 100 A/ms
GS
GS
GS
I
DS
DS
DS
DS
S
DS
DD
v −5.0 V, V
= −10 V, V
= −1.1 A, V
Test Condition
= −4.5 V, I
= −3.6 V, I
= −2.5 V, I
= V
= 0 V, V
= −16 V, V
= −10 V, I
= −16 V, V
= −10 V, R
I
2
T
D
R
GS
J
= −3.6 A
G
= 85°C
, I
= 6 W
D
GS
GEN
GS
Symbol
D
= −250 mA
D
D
D
GS
GS
GS
GS
R
R
L
= "12 V
= −3.6 A
= −3.6 A
= −3.3 A
= −2.7 A
= −4.5 V,
qJA
qJF
= 10 W
= −4.5 V,
= −4.5 V
= 0 V
= 0 V,
= 0 V
Typ
40
80
15
−0.6
Min
−15
0.056
0.065
0.095
−0.8
Typ
7.5
0.9
2.2
8.5
10
14
38
30
30
Max
50
95
20
"100
0.065
0.074
0.110
Max
−1.0
−5.0
−1.2
2.8
12
13
21
57
45
60
−
°C/W
°C/W
Unit
Unit
nA
mA
nC
ns
ns
W
V
A
S
V