NTMFS4921NT1G ON Semiconductor, NTMFS4921NT1G Datasheet

MOSFET N-CH 30V 8.8A SO8 FL

NTMFS4921NT1G

Manufacturer Part Number
NTMFS4921NT1G
Description
MOSFET N-CH 30V 8.8A SO8 FL
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTMFS4921NT1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.95 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 11.5V
Input Capacitance (ciss) @ Vds
1400pF @ 12V
Power - Max
870mW
Mounting Type
Surface Mount
Package / Case
5-DFN, SO8 FL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS4921NT1G
Manufacturer:
ON Semiconductor
Quantity:
40
Part Number:
NTMFS4921NT1G
Manufacturer:
ON
Quantity:
8 000
Part Number:
NTMFS4921NT1G
Manufacturer:
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Quantity:
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Part Number:
NTMFS4921NT1G
Quantity:
310
Company:
Part Number:
NTMFS4921NT1G
Quantity:
45 178
NTMFS4921N
Power MOSFET
30 V, 58.5 A, Single N−Channel, SO−8 FL
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 3
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
10 sec
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
L
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Thermally Enhanced SO−8 Package
These are Pb−Free Device
CPU Power Delivery
DC−DC Converters
High Side Switching
qJA
qJA,
qJA
qJC
= 24 A
(Note 1)
(Note 2)
(Note 1)
t v 10 sec
DS(on)
pk
qJA
qJA
qJA
qJC
DD
, L = 0.3 mH, R
= 50 V, V
v
to Minimize Conduction Losses
Parameter
t
GS
Steady
p
State
=10ms
(T
= 10 V,
G
J
= 25°C unless otherwise stated)
= 25 W)
T
T
T
T
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
A
C
C
C
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
Symbol
I
Dmaxpkg
V
T
dV/dt
EAS
V
I
P
P
P
P
T
DSS
STG
T
I
I
I
I
DM
I
GS
D
D
D
D
S
J
D
D
D
D
L
,
−55 to
Value
+150
13.8
2.14
22.4
16.1
5.61
0.87
58.5
42.3
38.5
38.5
±20
117
100
260
8.8
6.4
30
10
86
6
1
Unit
V/ns
mJ
°C
°C
W
W
W
W
V
V
A
A
A
A
A
A
A
*For additional information on our Pb−Free strategy
†For information on tape and reel specifications,
NTMFS4921NT1G
NTMFS4921NT3G
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SO−8 FLAT LEAD
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
CASE 488AA
(BR)DSS
(Note: Microdot may be in either location)
30 V
STYLE 1
Device
G (4)
ORDERING INFORMATION
A
Y
WW
G
1
N−CHANNEL MOSFET
http://onsemi.com
10.8 mW @ 4.5 V
6.95 mW @ 10 V
D (5,6)
R
= Assembly Location
= Year
= Work Week
= Pb−Free Package
DS(ON)
(Pb−Free)
(Pb−Free)
Package
SO−8FL
SO−8FL
Publication Order Number:
MAX
S (1,2,3)
G
S
S
S
MARKING
DIAGRAM
AYWWG
NTMFS4921N/D
4921N
D
D
Tape & Reel
Tape & Reel
Shipping
G
1500 /
5000 /
I
D
58.5 A
MAX
D
D

Related parts for NTMFS4921NT1G

NTMFS4921NT1G Summary of contents

Page 1

... DM I 100 A Dmaxpkg T , −55 to ° +150 Device STG I 38.5 A NTMFS4921NT1G S dV/dt 6 V/ns EAS 86 mJ NTMFS4921NT3G †For information on tape and reel specifications, T 260 °C L including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) Junction−to−Ambient − sec 1. Surface−mounted on FR4 board using 1 sq−in pad Cu. 2. Surface−mounted on ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance ...

Page 4

25° DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.04 0.03 0.02 ...

Page 5

T = 25°C 1800 J 1600 C iss 1400 1200 1000 800 600 C oss 400 C 200 rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 ...

Page 6

DRAIN CURRENT (A) Figure 13. g vs. Drain Current FS 100 125° 0 ...

Page 7

... M 3.200 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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