NTGS3433T1G ON Semiconductor, NTGS3433T1G Datasheet
NTGS3433T1G
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NTGS3433T1G Summary of contents
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... DESCRIPTION AND PURPOSE: In connection to ON Semiconductor’s Initial Product Change Notification, number 16091: ON Semiconductor is notifying customers of its use of Copper Wire (in place of Gold Wire) on their MOSFET Products in the TSOP6 Package. Products assembled with High Cell Density (HD3e Silicon Platform) MOSFET Die will be affected. ...
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... Final Product/Process Change Notification #16163 RELIABILITY DATA SUMMARY: Reliability Test Results: TSOP6 Device: NTGS3433T1G Test: High Temperature Reverse Bias (HTRB) Conditions: Ta=150'C, Vds= 80% BVdss Rating, Duration : 504-Hrs, 3-Lots Results: 0/240 Test: High Temperature Gate Bias (HTGB) Conditions: Ta=150'C, Vds= 100% Vgs Rating, Duration : 504-Hrs, 3-Lots ...
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... Final Product/Process Change Notification #16163 AFFECTED DEVICE LIST NTGS3433T1G NTGS3433T1 NTGS3441PT1G NTGS3441T1G NTGS3441T1H NTGS3441T1 NTGS3443T1G NTGS3443T1H NTGS3443T1 NTGS3443T2G NTGS3443T2H NTGS3446T1G NTGS3446T1 NTGS3455T1G NTGS3455T1H NTGS3455T1 Issue Date: 08-Oct-2008 Rev.14 Jun 2007 Page ...