UPA1980TE-T1-AT Renesas Electronics America, UPA1980TE-T1-AT Datasheet - Page 3

• Manufacturer Part Number: UPA1980TE-T1-AT
• Description: MOSFET/SCHOTTKY P-CH 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA1980TE-T1-AT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4V
• Input Capacitance (ciss) @ Vds: 272pF @ 10V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document No. G16550EJ1V0DS00 (1st edition)
Date Published February 2003 NS CP(K)
Printed in Japan
ORDERING INFORMATION
Marking: TW
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
DESCRIPTION
directly by a 1.8 V power source.
on-state resistance and excellent switching characteristics,
and a low leakage Schottky barrier diode, and is suitable for
applications such as DC/DC converter of portable machine
and so on.
FEATURES
The
This device incorporates a MOS FET, which features a low
R
R
R
I
1.8 V drive available (MOS FET)
Low on-state resistance (MOS FET)
Low reverse current (Schottky barrier diode)
R
DS(on)1
DS(on)2
DS(on)3
= 20 A MAX. (V
PART NUMBER
PA1980 is a switching device, which can be driven
= 135 m
= 183 m
= 284 m
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
caution for electrostatic discharge.
V
PA1980TE
ESD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE
100 V TYP. (C = 200 pF, R = 0
MAX. (V
MAX. (V
MAX. (V
R
= 40 V)
GS
GS
GS
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
SC-95 (Mini Mold Thin Type)
MOS FET WITH SCHOTTKY BARRIER DIODE
PACKAGE
D
D
D
= 1.0 A)
= 1.0 A)
= 0.5 A)
FOR SWITCHING
DATA SHEET
, Single pulse)
0.32
+0.1
–0.05
PIN CONNECTION (Top View)
PACKAGE DRAWING (Unit: mm)
1: Anode
2: Source
3: Gate
6
1
1
0.95
6
2.9 ±0.2
1.9
5
2
0.95
4: Drain
5: N/C
6: Cathode
5
2
4
3
PA1980
4
3
0.9 to 1.1
0.65
0.16
0 to 0.1
+0.1
–0.06
2003