NTD5407NT4G ON Semiconductor, NTD5407NT4G Datasheet

MOSFET N-CH 40V 38A DPAK

NTD5407NT4G

Manufacturer Part Number
NTD5407NT4G
Description
MOSFET N-CH 40V 38A DPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD5407NT4G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 32V
Power - Max
75W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.026 Ohms
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
38 A
Power Dissipation
75 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD5407NT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTD5407NT4G
Manufacturer:
ON/安森美
Quantity:
20 000
NTD5407N
Power MOSFET
40 V, 38 A, Single N−Channel, DPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 2
MAXIMUM RATINGS
Continuous Drain
Current − R
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Power Dissipation −
R
Continuous Drain
Current R
Power Dissipation −
R
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to Source Avalanche
Energy − (V
L = 1 mH, R
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Junction−to−Case (Drain)
Junction−to−Case (Note 1)
Low R
High Current Capability
Low Gate Charge
These are Pb−Free Devices
Electronic Brake Systems
Electronic Power Steering
Bridge Circuits
qJC
qJA
(Cu Area 1.127 sq in [2 oz] including traces).
(Note 1)
DS(on)
qJA
qJC
DD
G
(Note 1)
= 25 W)
= 50 V, V
Parameter
Parameter
GS
(T
Steady
Steady
Steady
Steady
State
State
State
State
J
= 10 V, I
= 25°C unless otherwise stated)
t
p
= 10 ms
T
T
T
T
T
T
PK
C
A
C
C
A
A
= 100°C
= 100°C
= 25°C
= 25°C
= 25°C
= 25°C
= 17 A,
(Note 1)
Symbol
Symbol
V
T
R
R
EAS
V
I
T
P
P
DSS
DM
STG
T
I
I
I
θJC
θJA
GS
D
D
S
J
D
D
L
,
−55 to
Value
Max
±20
175
150
260
7.6
5.3
2.9
2.0
40
38
27
75
75
36
52
1
°C/W
°C/W
Unit
Unit
mJ
°
°C
W
W
V
V
A
A
A
A
C
†For information on tape and reel specifications,
NTD5407NG
NTD5407NT4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
(BR)DSS
Device
40 V
1 2
CASE 369C
STYLE 2
DPAK
ORDERING INFORMATION
3
G
Y
WW
5407N
G
http://onsemi.com
4
21 mW @ 10 V
R
(Pb−Free)
(Pb−Free)
N−Channel
Package
DS(ON)
DPAK
DPAK
= Year
= Work Week
= Specific Device Code
= Pb−Free Device
D
Publication Order Number:
S
TYP
1
2500 / Tape & Reel
MARKING
DIAGRAM
75 Units / Rail
Shipping†
NTD5407N/D
07NG
YWW
(Note 1)
I
D
38 A
54
MAX

Related parts for NTD5407NT4G

NTD5407NT4G Summary of contents

Page 1

... ORDERING INFORMATION Device Package Shipping† NTD5407NG DPAK 75 Units / Rail (Pb−Free) NTD5407NT4G DPAK 2500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 ...

Page 4

iss 1200 C rss 600 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 ...

Page 5

TYPICAL PERFORMANCE CURVES D = 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0.01 0.00001 0.0001 P (pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME J(pk DUTY CYCLE, ...

Page 6

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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