2SJ356-T1-AY Renesas Electronics America, 2SJ356-T1-AY Datasheet - Page 6
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2SJ356-T1-AY
Manufacturer Part Number
2SJ356-T1-AY
Description
MOSFET P-CH 60V SC-62
Manufacturer
Renesas Electronics America
Datasheet
1.2SJ356-T1-AY.pdf
(8 pages)
Specifications of 2SJ356-T1-AY
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
500 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
11.6nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
4
–0.0001
–0.001
1 000
1 000
–0.01
–0.1
100
100
–10
10
10
–1
1
0
–0.2
1 m
V
Pulsed
V
V
GS
DD
GS(on)
Single pulse
Using ceramic substrate of
7.5 cm
= 0
= –25 V
SWITCHING CHARACTERISTICS
–0.4
V
= –10 V
SD
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
2
- Source to Drain Voltage - V
I
D
0.7 mm
- Drain Current - A
–0.6
10 m
–1
t
t
t
d(off)
f
d(on)
–0.8
t
r
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
–1.0
100 m
–1.2
–10
PW - Pulse Width - s
10 000
1 000
1 000
100
100
10
10
–0.05
–1
1
V
f = 1 MHz
V
di/dt = 50 A/ s
GS
GS
–0.1
= 0
= 0
V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
DS
I
F
- Diode Forward Current -A
- Drain to Source Voltage - V
–0.5
–10
10
–1
C
C
C
iss
oss
rss
–5
2SJ356
–100
–10
100