2SJ356-T2-AY Renesas Electronics America, 2SJ356-T2-AY Datasheet - Page 7

• Manufacturer Part Number: 2SJ356-T2-AY
• Description: MOSFET P-CH 60V SC-62
• Manufacturer: Renesas Electronics America

Specifications of 2SJ356-T2-AY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

REFERENCE
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
Document Name
Document No.
MEI-1202
C10535E
X10679E
TEI-1202
IEI-1209
2SJ356
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